triode bipolar power transistor

Brand Name:Diode Triode Transistor

Model Number:TIP137

Place of Origin:USA

...Bipolar NPN 100V 6A TO220 Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor...

Place of Origin:US

Brand Name:Original

Model Number:TIP41C

... Transistor Type NPN Current - Collector (Ic) (Max) 6A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A Current - Collector Cutoff (Max) 700µA DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V Power - ...

Brand Name:ON / ST / FSC

Model Number:TIP147

Place of Origin:Original Factory

...Transistors TO-3P TIP147 10A 100V PNP Darlington Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors...

Brand Name:RKENS

Model Number:RS-901K

Place of Origin:China

... time. It is suitable for big quantity radia lead forming. Save labor. It can work for transistors, capacitors, etc. Suitable: For kinds of radial components, such as bridge, E-caps(manuall put components), CBB capacitor, etc Can bend lead to 90 degrees,

Brand Name:onsemi

Model Number:SGL160N60UFD

Place of Origin:Original Factory

IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications...

Brand Name:Texas Instruments

Model Number:TPD2S300YFFR

Place of Origin:china

PRODUCT DESCRIPTION 8542.39.0001 Triode NPN PNP Transistor Circuit Protection TPD2S300YFFR NPN PNP Transistor Texas Instruments/TI TPD2S300YFFR ECAD Module PCB Symbol,Footprint & 3D Model Supply and Demand Status Balance ...

Categories:Diodes Transistors

Country/Region:china

MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ...

Brand Name:CJ

Model Number:DTC143ZCA

Place of Origin:Shenzhen,China

Bipolar Junction Transistor DTC143ZCA Rated power 200 mW Collector maximum allowable current 100mA Product description Part number DTC143ZCA is manufactured by CJ Company and distributed by AYE. As one of the leading distributors of electronic products, we...

Brand Name:RKENS

Model Number:RS-909A

Place of Origin:China

Automatic Bulk Triode Forming Machine Transistor Component Cutting Foot Bending Machine With Protective Cover Intro: Auto feed type transistors lead forming machine. Vibraion bowl can feed transistor, detect back and front side. Forming tool can be ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MJE13003

TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERING ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:MJE13003

TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERING ...

Brand Name:Anterwell

Model Number:2SB649A

Place of Origin:original factory

2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A ORDERING INFORMATION ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF15060S

Quick Detail: MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS Description: Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ...

Brand Name:ON / ST / FSC

Model Number:TIP147

Place of Origin:Original Factory

...Transistors TO-3P TIP147 10A 100V PNP DarliCM GROUPon Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base island” layout and monolithic DarliCM GROUPon configuration. The resulting transistors...

Brand Name:Diodes Incorporated

Model Number:ZXTN25100BFHTA

Place of Origin:USA

ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W Surface Mount Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: NPN ...

Place of Origin:Original

SMF28CA Specifications Series SMF RoHS RoHS Type Zener Part Status Active Applications General Purpose Mounting Type Surface Mount Package / Case SOD-123F Power - Peak Pulse 200W Operating Temperature -65°C ~ 150°C (TJ) Power Line Protection No ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:

Place of Origin:Original

Brand Name:Original

Model Number:2SD882

#detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px...

Brand Name:original

Model Number:2N3439

Place of Origin:original

...Bipolar Transistors Through Hole TO-39-3 Manufacturer: original Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-39-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 350 V Collector- Base Voltage VCBO: 450 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 500 mV Maximum DC Collector Current: 1 A Pd - Power

Brand Name:Julun

Model Number:PG-TO 252/PG-TO 251

Place of Origin:CHINA

IPD70R1K4CE, IPS70R1K4CE FET 700V CoolMOS CE Power Transistor MOS tube Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to ...