2N3792 Bipolar Transistors BJT 80V 10A 5000mW 3 Pin TO-3 Tray
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...Bipolar Transistors BJT Power BJT Trans GP BJT PNP 80V 10A 5000mW 3-Pin(2+Tab) TO-3 Tray Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-3 Product Type: BJTs - Bipolar Transistors Factory Pack Quantity: 1 Subcategory: Transistors......
Walton Electronics Co., Ltd.
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Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
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G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ......
Shenzhen ATFU Electronics Technology ltd
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RF Power Transistors MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS
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Quick Detail: MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS Description: Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ......
Mega Source Elec.Limited
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MMBT2907ALT1G PNP Bipolar Transistor 60V VCEO, 600mA Continuous Current 310mW Power Dissipation SOT-23 Package Low Saturation Voltage High Current Gain For General-Purpose Amplification and Switching
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...andamp; Switching andnbsp; Features 1:Transistor Type: PNP Bipolar (BJT) 2:Voltage Rating: 60V Vandlt;subandgt;CEOandlt;/subandgt; 3:Current Rating: 600mA Continuous Iandlt;subandgt;Candlt;/......
TOP Electronic Industry Co., Ltd.
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ZXTP19100CGTA PNP Diodes Incorporated Bipolar Transistors For Motor Drive
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ZXTP19100CGTA Diodes Incorporated Bipolar Transistors 1. Features BVCEO > -100V BVECO > -7V IC = -2AHigh Continuous Current Low Saturation VoltageVCE(sat) < -130mV @ -1ARCE(sat) =100mΩ Complementary NPNType:ZXTN19100CG Lead-Free Finish; RoHS Compliant (......
Shenzhen Hongxinwei Technology Co., Ltd
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Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1
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PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply ......
Guangzhou Topfast Technology Co., Ltd.
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Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1
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IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ......
Yingxinyuan Int'l(Group) Ltd.
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SOT223 Bipolar Electronic Passive Components Transistor BCP56-16T1G TRANS NPN 80V 1A
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... is housed in the SOT−223 package, which is designed for medium power surface mount applications. PRODUCT PROPERTIES Product Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1 A Voltage - Collector Emitter Breakdown (Max) 80 V...
STJK(HK) ELECTRONICS CO.,LIMITED
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PUMD3,125
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Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP...
Beijing Silk Road Enterprise Management Services Co.,LTD
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MMBZ20VAL-QR Circuit Protection Components SOT-23-3 ESD Suppressors
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... x 1mm package. This mainstay package in semiconductors was introduced in 1969 and quickly became an industry standard. The SOT23 encapsulates an extensive range of diodes, bipolar transistors, MOSFETs, and ESD protection...
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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