0.35W N Channel 0.22A BSS138 Field Transistor Mosfets
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SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct ......
Guangdong Huixin Electronics Technology Co., Ltd.
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IRFS3207ZTRRPBF MOSFET Power Electronics: High-Performance Low-Voltage Switching Solution
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Product Listing: IRFS3207ZTRRPBF N-Channel MOSFET Parameters: • Vds (max): 55V • Rds (on): 0.0075Ω • Ids (max): 110A • Package: TO-220AB • Gate charge (typical): 55nC • Power dissipation (max): 35W • Operating temperature: -55°C to +175......
Shenzhen Sai Collie Technology Co., Ltd.
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SIHA22N60E-E3 Field Effect Transistor Transistors FETs MOSFETs Single
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...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 35W......
KZ TECHNOLOGY (HONGKONG) LIMITED
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STF11NM80
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N-Channel 800 V 11A (Tc) 35W (Tc) Through Hole TO-220FP...
Beijing Silk Road Enterprise Management Services Co.,LTD
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