fets mosfets with high power

Brand Name:ONSEMI

Model Number:MMBT4401LT1G

Place of Origin:Original

MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBT4401LT1 SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT4401LT1G (Pb−Free) 3,000 / Tape & ...

Brand Name:Original brand

Model Number:STO33N60M6

Place of Origin:Original

Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet Power...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:WSP4012

QM4803D​ N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gatecharge for most of the synchronous buck converter applications . The ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:SSN1N45B

High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:Original Factory

Model Number:MSC017SMA120S

Place of Origin:CN

Integrated Circuit Chip MSC017SMA120S Single FETs MOSFETs Transistors TO-268-3​ Product Description Of MSC017SMA120S MSC017SMA120S is a 1200 V, 17 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-268 (D3PAK) package, Surface Mount. Specification Of ...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MGF0906B

...  High output power P1dB=37.0dBm(TYP.) @f=2.3GHz  High power gain GLP=11.0dB(TYP.) @f=2.3GHz  High power added efficiency P.A.E =40%(TYP.) @f=2.3GHz,P1dB  Hermetically sealed metal-ceramic package with ceramic lid Specifications: part no

Brand Name:Mersen

Model Number:NH1GG69V250P

Place of Origin:China

...-isolated gripping lugs Double indicator 0% cadmium Applications gG: general purpose cable and line protection Description The NH1GG69V250P is a high-power Silicon Carbide (SiC) MOSFET module engineered for the most

Brand Name:HT

Model Number:F16N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Model Number:SLC500MM15SHN2

...MOSFET half-bridge power module designed for high-current density applications. It features high ruggedness, easy paralleling, and low on-state resistance, making it suitable for DC/DC converters, UPS systems, AC motor control, and solar applications.Product Attributes Brand: SCILICON Type: N-Channel MOSFET, Half-Bridge Power...

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

...Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power...

Brand Name:TOSHIBA

Model Number:TK35N65W

Place of Origin:Original Factory

...-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages.

Brand Name:Infineon

Model Number:IPP65R190CFD7XKSA1

Place of Origin:Germany

IPP65R190CFD7XKSA1 Infineon MOSFET HIGH POWER NEW TO-220-3 IPP65R190CFD7 IPP65R190CFD Manufacturer: Infineon Product Category: MOSFET Technology: Si Installation style: Through Hole Package/Box: TO-220-3 Transistor polarity: N-Channel Number of channels...

Brand Name:JUYI

Model Number:JY4P7M

Place of Origin:China

... device. It achieves a high cell density and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing techniques. Additionally, the device features low ...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged ...

Brand Name:ZMSH

Model Number:4H

Place of Origin:China

... substrates for semiconductor, Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​ Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2

Brand Name:Infineon Technologies

Model Number:SPW20N60C3

Place of Origin:China

Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working...

Model Number:LM3409MY

LM3409MY LM3409 Driver ICs LM4811MM LM5060MM LM3481MM LM5020MM LM3445MM LM5106MM LM25011 LM3409,LM3409-Q1,LM3409HV,LM3409HV-Q1 LM3409,-Q1, LM3409HV,-Q1 P-FETBuck Controllerfor High-PowerLED Drivers Features • LM3409-Q1 and LM3409HV-Q1 are Automotive Grade ...

Place of Origin:US

Brand Name:Original

Model Number:MJL21195G MJL21196G

Product Detail Packaging Tube Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 16A Voltage - Collector Emitter Breakdown (Max) 250V Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A Current - Collector Cutoff (Max) 100µA DC Current Gain (...

Brand Name:juyi

Model Number:JY8N5M

Place of Origin:China

General Description: The product utilizes the advanced planar processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA