fets mosfets power amplifier

Brand Name:AD

Model Number:AD8062ARZ

Place of Origin:Original

AD8062ARZ Low Cost, 300 MHz Rail-to-Rail Amplifiers FEATURES Low cost Single (AD8061), dual (AD8062) Single with disable (AD8063) Rail-to-rail output swing Low offset voltage: 6 mV High speed 300 MHz, −3 dB bandwidth (G = 1) 650 V/μs slew rate 8.5 nV/√Hz...

Brand Name:AD

Model Number:AD8062ARZ

Place of Origin:Original

AD8062ARZ Low Cost, 300 MHz Rail-to-Rail Amplifiers FEATURES Low cost Single (AD8061), dual (AD8062) Single with disable (AD8063) Rail-to-rail output swing Low offset voltage: 6 mV High speed 300 MHz, −3 dB bandwidth (G = 1) 650 V/μs slew rate 8.5 nV/√Hz...

Model Number:LME49830TB

Brand Name:Original

Place of Origin:US

Product Detail Packaging Tube Part Status Obsolete Type Class AB Output Type 1-Channel (Mono) Voltage - Supply ±20V ~ 100V Features Mute, Thermal Protection Mounting Type Through Hole Operating Temperature -40°C ~ 85°C (TA) Package / Case TO-247AE-15 ...

Brand Name:Infineon Technologies

Model Number:IRLU024NPBF

Place of Origin:original

...MOSFET Power Electronics Reliable High-Performance MOSFETs for Power Management Description: The IRL U024NPBF is a N-channel MOSFET from International Rectifier. It is a logic level FET suitable for switching and amplifier applications. Features: • Logic Level FET...

Model Number:YP30902547

Place of Origin:Jiangsu, China

Brand Name:SZHUASHI

SZHUASHI YP30902547 40W LDMOS FETs Wired LAN Network Signal Power Amplifier for 1.5GHz Radio Applications Product Description Innotion’s YP30902547 is a 40-watt, unmatched LDMOS FETs, designed for radio applications at frequencies to 1.5GHz. It can be ...

Brand Name:Mitsubishi

Model Number:RD100HHF1

Place of Origin:JP

...%typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND ...

Brand Name:ON / ST / FSC

Model Number:TIP142

Place of Origin:Original Factory

...Mosfet Power Transistor TIP142 for amplifier and switching applications TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features Designed for general-purpose amplifier...

Brand Name:Hua Xuan Yang

Model Number:AP3N10BI

Place of Origin:ShenZhen China

...Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET...

Brand Name:Jianqiao

Model Number:JQ

Place of Origin:China

...power amplifiers embody the latest MOSFET technology, output power from 1kVA to 70kVA. JQI series adopts the latest generation of IGBT soft switching resonance technology, the output power is from 5kVA to 500kVA, the power margin is large, the High conversion efficiency , and the electromagnetic compatibility is good. The power amplifier is composed of a logic unit, a power...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:ST brand

Model Number:STB270N4F3 STB270N TO-263-3

Place of Origin:Japan

Brand new MOS FET STB270N4F3 STB270N TO-263-3 mosfet Model number/ Part number STB270N4F3 STB270N Package TO-263- 3 Original condition Original 100% Brand name ST Stock Yes! In stock!! Bulk!! Contact me now Whatsapp/ Skype/ Number 86- 15102073750 - Product...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF

Place of Origin:CHINA

...Transistors TO-220AB HEXFET FETs MOSFETs Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​ Description: This HEXFET® Power MOSFET utilizes the latest processing...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF

... ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​ Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Brand Name:STMicroelectronics

Model Number:STW9N150

STW9N150 MOSFET N-CH 1500V 8A TO247-3 Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Mfr STMicroelectronics Series PowerMESH™ Package Tube Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) ...

Brand Name:Original Factory

Model Number:MSC017SMA120S

Place of Origin:CN

Integrated Circuit Chip MSC017SMA120S Single FETs MOSFETs Transistors TO-268-3​ Product Description Of MSC017SMA120S MSC017SMA120S is a 1200 V, 17 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-268 (D3PAK) package, Surface Mount. Specification Of ...

Place of Origin:Original

...FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V Vgs (Max) - FET Feature - Power...

Brand Name:SWT

Model Number:SW-PA-20004000-47C

Place of Origin:China

... range of 2000MHz to 4000MHz, specifically targeting the S band. Below are the detailed specifications and features of this power amplifier: Frequency Range: This power amplifier is suitable for amplifying signals across the frequency range of 2000MHz to

Brand Name:P-AMF

Model Number:P5

Place of Origin:china

...es a low-level input signal and increases its power level to a level suitable for driving speakers. 2,Power Output: Power amplifiers are rated based on their power output, typically measured in watts. The power output determines the amplifier's ability to

Place of Origin:CHINA

Brand Name:EST

Model Number:NR20W-N1

...Power Amplifier Module 80×50×16mm VSWR ≤1.5 Product Description: Power Amplifier Module: Small Size, High Output Power Our Power Amplifier Module (PA Module) is a RF power amplifier module designed for LTE/NR frequency with a small size of 80×50×16mm. The module is capable of providing up to 33dBm output power...