fast switching n channel mosfet

Brand Name:Lingxun

Place of Origin:China

Fast Switching High Power MOSFET N Channel Stable For Motor Driver Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of adaptor and charger. N-Channel Enhancement Mode Power MOSFET

Model Number:IRFB4229PBF

Place of Origin:original factory

PDP SWITCH IRFB4229PbF Features • Advanced Process Technology • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:Rs1a

RS1A THRU RS1M SURFACE MOUNT FAST RECOVERY RECTIFIER FEATURE Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals Glass passivated chip junction The ...

Brand Name:SANYO

Model Number:2SK1423

Place of Origin:CHINA

2SK1423 K1423 TO3P Ultrahigh-Speed Switching Applications Low ON-state resistance N-Channel MOSFET List Of Other Electronic Components In Stock SP6887ER4-L/TR SIPEX/EXA FSB660A FAIRCHILD NLV25T-470J-PF TDK DS1337S+T ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:RS3A THRU RS3M

RS3A THRU RS3M SURFACE MOUNT FASTRE COVERY RECTIFIER FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement ...

Brand Name:Infineon Technologies

Model Number:IRLML2060TRPBF

Place of Origin:original

.... It is designed to provide low on-resistance, low gate charge, and fast switching speeds. Features: -N-Channel -Low On-Resistance (Rdson) -Low Gate Charge -Fast Switching Speeds -High Current Rating (2.2A) -Operating Temperature Range (from -55°C

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Original

...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs...

Brand Name:JUYI

Model Number:JY2504NPM

Place of Origin:China

... RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES ● Low Input Capacitance ● Fast Switching Speed APPLICATIONS ● Power Management ● DC/DC Converter ● DC Motor Control ●

Brand Name:Infineon

Model Number:IRF9540NPBF

Place of Origin:Original Factory

...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in

Brand Name:Infineon

Model Number:IRF1404PBF

Place of Origin:China

...Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to

Brand Name:Vishay

Model Number:SI7804DN-T1-E3DKR-ND

Place of Origin:USA

SI7804DN-T1-E3DKR-ND MOSFET RECOMMENDED ALT Product Attribute Attribute Value Manufacturer: Vishay Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerPAK-1212-8 Tradename: TrenchFET Series: SI7 Packaging: ...

Brand Name:Vishay

Model Number:IRFP9240PBF

Place of Origin:Original

... •Simple drive requirements •Material categorization: for definitions of compliance DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

Brand Name:MOT

Model Number:MC34114P

... days ! Free shipping: Order over $1000 win a free shipment fee (goods weight below 3Kg) ,during 20130901-20130930 . Why buy from us >>> Fast / Safely / Conveniently • Mega Source is a Stock keeper and trade company of

Brand Name:Infi neon

Model Number:IRF3205PBF

Place of Origin:Shenzhen, China

.... Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute Maximum Ratings : Description : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

Brand Name:Original Brand

Model Number:IRLML6402TRPBF

Place of Origin:CN

... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and

Brand Name:Original brand

Model Number:IRF640NSTRLPBF

Place of Origin:Original Manufacturer

...CHANNEL MOSFET TRANSISTOR 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet Transistor 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast

Brand Name:INFINEON

Model Number:IPD082N10N3

Place of Origin:original

...channel MOSFET transistor. The following are its applications, conclusions, and parameters: Application: Used as a high-voltage and high-power load switch Used as a switch for converters and regulators Conclusion: High voltage capability: Vds=100V Low conduction resistance: Rds (on)=8.2m Ω (typ.) Fast switching...

Brand Name:JUYI

Model Number:JY12M

Place of Origin:China

JY12M N And P Chennel 30V MOSFET With Fast Switching Speed For Inverter Applications General Description The JY12M is a type of power field transistor designed in both N and P Channel logic enhancement mode. These transistors are manufactured using a high ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...MOSFET from SGT, a breakthrough FOM optimization which covers more applications. This low gate voltage mosfet offers low power loss and low threshold voltage that allows it to be used in various motor driver, 5G base station, energy storage, high-frequency switch, synchronous rectification, wireless charging, fast...

Brand Name:IR

Model Number:IRFP064N

Place of Origin:CHINA

... Fully Avalanche Rated Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and