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5N20DY 200V N-Channel Enhancement Mode MOSFET

Categories Mosfet Power Transistor
Brand Name: Hua Xuan Yang
Model Number: 5N20DY
Certification: RoHS、SGS
Place of Origin: ShenZhen China
MOQ: 1000-2000 PCS
Price: Negotiated
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
Delivery Time: 1 - 2 Weeks
Packaging Details: Boxed
Product name: Mosfet Power Transistor
APPLICATION: Power Management
FEATURE: Excellent RDS(on)
Power mosfet transistor: Enhancement Mode Power MOSFET
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    5N20DY 200V N-Channel Enhancement Mode MOSFET

    5N20D / Y 200V N-Channel Enhancement Mode MOSFET


    DESCRIPTION

    The AP50N20D uses advanced trench

    technology to provide excellent RDS(ON) and low gate charge .

    The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other


    FEATURES

    VDS =200V,ID =5A

    RDS(ON) <520mΩ @ VGS=4.5V


    Application

    Load switching

    Hard switched and high frequency circuits Uninterruptible power supply


    ORDERING INFORMATION

    Product IDPackMarkingQty(PCS)
    5N20DTO-2525N20D3000
    5N20YTO-2515N20Y4000

    Note: Pin Assignment: G: Gate D: Drain S: Source


    ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)


    ParameterSymbolLimitUnit
    Drain-Source VoltageVDS200V
    Gate-Source VoltageVGS±20V
    Drain Current-ContinuousID5A
    Drain Current-Pulsed (Note 1)IDM20A
    Maximum Power DissipationPD30W
    Operating Junction and Storage Temperature RangeTJ,TSTG-55 To 150

    Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

    Absolute maximum ratings are stress ratings only and functional device operation is not implied.

    4. Repetitive Rating: Pulse width limited by maximum junction temperature.

    5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

    6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

    THERMAL DATA

    Thermal Resistance,Junction-to-Ambient (Note 2)RθJA4.17℃/W

    ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)


    ParameterSymbolConditionMinTypMaxUnit
    Off Characteristics
    Drain-Source Breakdown VoltageBVDSSVGS=0V ID=250μA200--V
    Zero Gate Voltage Drain CurrentIDSSVDS=200V,VGS=0V--1μA
    Gate-Body Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
    On Characteristics (Note 3)
    Gate Threshold VoltageVGS(th)VDS=VGS,ID=250μA1.21.72.5V
    Drain-Source On-State ResistanceRDS(ON)VGS=10V, ID=2A-520580mΩ
    Forward TransconductancegFSVDS=15V,ID=2A-8-S
    Dynamic Characteristics (Note4)
    Input CapacitanceClss

    VDS=25V,VGS=0V, F=1.0MHz

    -580-PF
    Output CapacitanceCoss-90-PF
    Reverse Transfer CapacitanceCrss-3-PF
    Switching Characteristics (Note 4)
    Turn-on Delay Timetd(on)

    VDD=100V, RL=15Ω VGS=10V,RG=2.5Ω

    -10-nS
    Turn-on Rise Timetr-12-nS
    Turn-Off Delay Timetd(off)-15-nS
    Turn-Off Fall Timetf-15-nS
    Total Gate ChargeQg

    VDS=100V,ID=2A, VGS=10V

    -12nC
    Gate-Source ChargeQgs-2.5-nC
    Gate-Drain ChargeQgd-3.8-nC
    Drain-Source Diode Characteristics
    Diode Forward Voltage (Note 3)VSDVGS=0V,IS=2A--1.2V
    Diode Forward Current (Note 2)IS--5A

    Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

    • Essentially independent of operating temperature.


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