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TLP155E Electronic integrated circuit Chips Photocouplers GaA As Infrared LED & Photo IC

Categories Electronic IC Chips
Brand Name: Anterwell
Model Number: TLP155E
Certification: new & original
Place of Origin: original factory
MOQ: 10pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 9200pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Threshold input current (L/H): 10 to 15 mA
Threshold input voltage (H/L): 0 to 0.8 V
Supply voltage: 10 to 30 V
Peak high-level output current: -0.2 A
Peak low-level output current: +0.2 A
Operating temperature: -40 to 100℃
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    TLP155E Electronic integrated circuit Chips Photocouplers GaA As Infrared LED & Photo IC


    Photocouplers GaAℓAs Infrared LED & Photo IC TLP155


    Applications

    • Plasma Display Panels (PDPs)

    • Transistor Inverters

    • MOSFET Gate Drivers

    • IGBT Gate Drivers


    General

    The Toshiba TLP155 consists of a GaAℓAs infrared light-emitting diodes and integrated high gain, high-speed photodetectors. The TLP155 is housed in the SO6 package. The photodetector has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±20 kV/µ. TLP155 is suitable for direct gate driving circuit for IGBTs or power MOSFETs.


    Features

    (1) Buffer logic type (Totem pole output)

    (2) Package type: SO6

    (3) Output peak current: ±0.6 A (max)

    (4) Operating temperature: -40 to 100℃

    (5) Threshold input current: 7.5 mA (max)

    (6) Propagation delay time: tpHL/tpLH = 200 ns (max)

    (7) Common-mode transient immunity: ±20 kV/µs (min)

    (8) Propagation delay skew: ±85 ns(max)

    (9) Isolation voltage: 3750 Vrms (min)


    Packaging and Pin Assignment


    Internal Circuit (Note)


    Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25℃​)

    CharacteristicsSymbolNoteRatingUnit
    LEDInput forward currentIF20mA
    Input forward current derating (Ta ≥ 92℃)∆IF/∆T0.63mA/℃
    Peak transient input forward currentIFPT(Note 1)1A
    Input reverse voltageVR5V
    Junction temperatureTj125
    DetectorPeak high-level output current (Ta = -40 to 100℃)IOPH(Note 2)-0.6A
    Peak low-level output current (Ta = -40 to 100℃)IOPL(Note 2)+0.6A
    Output voltageVO35V
    Supply voltageVCC35V
    Junction temperatureTj125
    CommonOperating temperatureTopr-40 to 100
    Storage temperatureTstg-55 to 125
    Lead soldering temperature (10 s)Tsol260
    Isolation voltage AC, 1 min, R.H. ≤ 60%, Ta = 25℃BVS(Note 3)3750Vrms

    Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

    Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

    Note 1: Pulse width (PW) ≤ 1 µs, 300 pps

    Note 2: Exponential waveform. Pulse width ≤ 2 µs, f ≤ 10 kHz, VCC = 20V, Ta = -40 to 100℃

    Note 3: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together.


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